1999-11-22 page 1 bsp 171 p preliminary data sipmos small-signal-transistor features p-channel enhancement mode avalanche rated logic level d v /d t rated product summary drain source voltage v v ds -60 drain-source on-state resistance r ds(on) 0.3 w continuous drain current a i d -1.9 vps05163 1 2 3 4 type package ordering code bsp 171 p sot-223 q67041-s4019 pin 1 pin2/4 pin 3 g d s maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol unit value -1.9 -1.5 a continuous drain current t a = 25 c t a = 70 c i d pulsed drain current t a = 25 c i d puls -7.6 avalanche energy, single pulse i d = -1.9 a , v dd = -25 v, r gs = 25 w 70 mj e as avalanche energy, periodic limited by t jmax e ar 0.18 d v /d t 6 reverse diode d v /d t i s = -1.9 a, v ds = -48 v, d i /d t = 200 a/s, t jmax = 150 c kv/s gate source voltage v gs 20 v power dissipation t a = 25 c p tot 1.8 w operating and storage temperature t j , t stg -55...+150 c iec climatic category; din iec 68-1 55/150/56
1999-11-22 page 2 bsp 171 p preliminary data thermal characteristics parameter symbol unit values min. max. typ. characteristics thermal resistance, junction - soldering point (pin 4) 20 k/w - r thjs - smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - 110 70 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = -250 a v (br)dss -60 - v - gate threshold voltage, v gs = v ds i d = -250 a -1 -1.5 -2 v gs(th) zero gate voltage drain current v ds = -60 v, v gs = 0 v, t j = 25 c v ds = -60 v, v gs = 0 v, t j = 125 c a -1 -100 i dss -0.1 10 - - i gss - -10 -100 gate-source leakage current v gs = -20 v, v ds = 0 v na drain-source on-state resistance v gs = -4.5 v, i d = -1.5 a r ds(on) - 0.3 0.45 w drain-source on-state resistance v gs = -10 v, i d = -1.5 a r ds(on) - 0.21 0.3 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
1999-11-22 page 3 bsp 171 p preliminary data electrical characteristics, at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 2* i d * r ds(on)max , i d = -1.5 a 1 g fs s - 3 input capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c iss 365 460 pf - c oss - 135 105 output capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz reverse transfer capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz 50 40 c rss - turn-on delay time v dd = -30 v, v gs = -4.5 v, i d = -1.5 a, r g = 6.2 w - 30 ns 20 t d(on) rise time v dd = -30 v, v gs = -4.5 v, i d = -1.5 a, r g = 6.2 w t r - 12 8 184 276 t d(off) turn-off delay time v dd = -30 v, v gs = -4.5 v, i d = -1.5 a, r g = 6.2 w - fall time v dd = -30 v, v gs = -4.5 v, i d = -1.5 a, r g = 6.2 w t f - 85 127
1999-11-22 page 4 bsp 171 p preliminary data electrical characteristics, at t j = 25 c, unless otherwise specified unit values symbol parameter min. typ. max. dynamic characteristics gate to source charge v dd = -48 v, i d = -1.9 a - q gs nc 2.3 1.5 gate to drain charge v dd = -48 v, i d = -1.9 a q gd 4.4 6.6 - 20 - q g gate charge total v dd = -48 v, i d = -1.9 a, v gs = 0 to -10 v 13.3 gate plateau voltage v dd = -48 v, i d = -1.9 a v (plateau) - -2.8 - v parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t a = 25 c i s - - -1.9 a inverse diode direct current,pulsed t a = 25 c i sm - - -7.6 inverse diode forward voltage v gs = 0 v, i f = -1.9 a v sd - -0.84 -1.1 v reverse recovery time v r = -30 v, i f = i s , d i f /d t = 100 a/s t rr - 80 120 ns reverse recovery charge v r = -30 v, i f = l s , d i f /d t = 100 a/s q rr - 125 190 nc
1999-11-22 page 5 bsp 171 p preliminary data drain current i d = f ( t a ) parameter : v gs 3 10v 0 20 40 60 80 100 120 c 160 t a 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 a -2.0 bsp 171 p i d power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 w 1.9 bsp 171 p p tot transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t p -2 10 -1 10 0 10 1 10 2 10 k/w bsp 171 p z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c -10 -1 -10 0 -10 1 -10 2 v v ds -2 -10 -1 -10 0 -10 1 -10 a bsp 171 p i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 160.0 s
1999-11-22 page 6 bsp 171 p preliminary data typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 a -2.6 i d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 w 1.0 bsp 171 p r ds(on) a v gs [v] = a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l l -10.0 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 v -5.0 v ds 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 a -5.0 bsp 171 p i d v gs [v] a a -2.5 b b -3.0 c c -3.5 d d -4.0 e e -4.5 f f -5.0 g g -5.5 h h -6.0 i i -6.5 j j -7.0 k k -8.0 l p tot = 2 w l -10.0 typ. transfer characteristics i d = f ( v gs ) v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 -1 -2 -3 -4 -5 v -7 v gs 0 -1 -2 -3 -4 -5 -6 -7 -8 a -10 i d typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 a -5.0 i d 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 s 6.0 g fs
1999-11-22 page 7 bsp 171 p preliminary data drain-source on-resistance r ds(on) = f ( t j ) parameter: i d = -1.9 a, v gs = -10 v -60 -20 20 60 100 c 180 t j 0.00 0.10 0.20 0.30 0.40 0.50 0.60 w 0.80 bsp 171 p r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = -250 a -60 -20 20 60 100 c 160 t j 0.0 -0.5 -1.0 -1.5 -2.0 v -3.0 v gs(th) 2% -60 -20 20 60 100 c 160 t j 0.0 -0.5 -1.0 -1.5 -2.0 v -3.0 v gs(th) typ -60 -20 20 60 100 c 160 t j 0.0 -0.5 -1.0 -1.5 -2.0 v -3.0 v gs(th) 98% -60 -20 20 60 100 c 160 t j 0.0 -0.5 -1.0 -1.5 -2.0 v -3.0 v gs(th) typ. capacitances c = f(v ds ) parameter: v gs =0 v, f =1 mhz 0 -5 -10 -15 -20 -25 -30 v -40 v ds 1 10 2 10 3 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd -2 -10 -1 -10 0 -10 1 -10 a bsp 171 p i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
1999-11-22 page 8 bsp 171 p preliminary data avalanche energy e as = f ( t j ) para.: i d = -1.9 a , v dd = -25 v, r gs = 25 w 25 45 65 85 105 125 c 165 t j 0 10 20 30 40 50 60 mj 80 e as typ. gate charge v gs = f ( q gate ) parameter: i d = -1.9 a pulsed 0 2 4 6 8 10 12 14 16 nc 20 q gate 0 -2 -4 -6 -8 -10 -12 v -16 bsp 171 p v gs ds max v 0,8 ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j -54 -56 -58 -60 -62 -64 -66 -68 v -72 bsp 171 p v (br)dss
1999-11-22 page 9 bsp 171 p preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
|
